- 您现在的位置：买卖IC网 > Sheet目录141 > RB080L-30TE25 (Rohm Semiconductor)DIODE SCHOTTKY 30V 5A PMDS
   www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB080L-30 80 130 180 230 280 330 IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:I FSM (A) 8.3ms 8.3ms IFSM 1cyc AVE：225A 0 5 10 15 20 25 30 trr DISPERSION MAP REVERSE RECOVERY TIME:t rr(ns) AVE:18.9ns IF=0.5A IR=1A Irr=0.25*IR 200 210 220 230 1 10 100 8.3ms 8.3ms IFSM 1cyc. PEAK SURGE FORWARD CURRENT:I FSM (A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 50 100 150 200 250 300 350 1 10 100 time IFSM PEAK SURGE FORWARD CURRENT:I FSM (A) TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 1000 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) On glass-epoxy substrate TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE:Rth ( ° C/W) 0 1 2 3 4 5 0246810 D.C. D=1/2 Sin(θ＝180) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3/4 2011.12 - Rev.B |